成核
蒙特卡罗方法
星团(航天器)
统计物理学
外延
材料科学
簇大小
格子(音乐)
分布(数学)
化学物理
分子物理学
晶体生长
二进制数
结晶学
凝聚态物理
物理
数学
化学
统计
纳米技术
热力学
计算机科学
电子结构
数学分析
图层(电子)
算术
程序设计语言
声学
作者
Wensen Ai,Xuejiang Chen
出处
期刊:Journal of vacuum science & technology
[American Vacuum Society]
日期:2023-06-29
卷期号:41 (4)
被引量:2
摘要
In order to better understand the microscopic nucleation behavior during the epitaxial growth of a SiC crystal, a lattice kinetic Monte Carlo model is developed, in which Si and C particles are set as the basic elements. The events list is built up to implement group search and binary search, which can improve the efficiency of the algorithm. In addition, the Hoshen–Kopelman algorithm is also used to calculate the statistics of the properties of clusters. Then, the cluster size distribution function and the nucleation preference of trimers are analyzed. The results show that the cluster size distribution function obeys the Gauss distribution, and the proportion of crystal nuclei close to the average size gradually increases. Moreover, the growth temperature mainly affects the trapping rate of adatoms by dimers, and the C/Si ratio affects the formation of different types of dimers and the concentration of adatoms.
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