拉曼光谱
材料科学
薄膜
化学气相沉积
基质(水族馆)
光电探测器
光电效应
光电子学
声子
钙钛矿(结构)
X射线光电子能谱
热导率
热稳定性
光学
复合材料
纳米技术
化学
结晶学
化学工程
凝聚态物理
海洋学
物理
有机化学
地质学
工程类
作者
Ravinder Chahal,Abhilasha Bora,P. K. Giri
出处
期刊:ACS applied energy materials
[American Chemical Society]
日期:2023-08-23
卷期号:6 (17): 8794-8807
标识
DOI:10.1021/acsaem.3c01249
摘要
As an alternative to lead-based perovskites, Cs2AgBiBr6 is an emerging lead-free double perovskite (DP), which has shown promise in the field of optoelectronics owing to its nontoxicity, high stability, and superior photoelectric properties. Herein, we demonstrate the growth of a highly crystalline and uniform Cs2AgBiBr6 thin film via chemical vapor deposition (CVD). By tuning the growth temperature, we successfully obtained Cs2AgBiBr6 thin films of high structural and compositional uniformity, confirmed by XRD, Raman, and XPS studies. Substrate-dependent growth aided the study of the induced lattice strain in the system. Temperature-dependent Raman analysis of the A1g mode was used to determine the thermal stability of the as-grown film and to estimate the temperature coefficient of the A1g mode (α ∼ −0.01431 ± 0.0039 cm–1 K–1) in the Cs2AgBiBr6 thin film. Power-dependent Raman spectral analysis was employed to evaluate the thermal conductivity of suspended Cs2AgBiBr6 as ∼1.97 ± 0.48 W/m-K. A detailed study of the electron–phonon and phonon–phonon interactions in the Cs2AgBiBr6 DP system was carried out. Additionally, due to its excellent absorption in the UV–vis region and long carrier lifetime, the CVD-grown Cs2AgBiBr6 film on a SiO2 substrate was utilized as a photodetector. The planar photodetector device, in addition to being self-powered, exhibited a fast photoresponse of ∼170/177 μs, which is far superior to that of Cs2AgBiBr6-based photodetectors reported to date. Thus, this work paves the way for the direct CVD growth of highly compact and uniform Cs2AgBiBr6 films on arbitrary substrates with exceptional thermal and environmental stability and superior optoelectronic performance. We believe that our results will eventually provide insightful strategies for developing high-performance optoelectronic devices based on lead-free inorganic double perovskites.
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