Ultra‐wide bandgap Al 0. 1 Ga 0 . 9 N double channel HEMT for RF applications

This article reports the performance analysis of gate field plate AlGaN dual channel high electron mobility transistor (HEMT). The proposed Al0.31Ga0.69N/Al0.1Ga0.9N/Al0.31Ga0.69N/Al0.1Ga0.9N heterostructures creates two quantum wells. Due to the strong coupling between two channels, device shown improved 2DEG (two-dimensional electron gas), and enhanced carrier confinement. A distinct double-hump feature is observed in both DC and RF characteristics of the proposed HEMT. For LG = 0.8 μm, gate field plate (LFP = 0.5 μm), double channel HEMT shows the breakdown voltage of 695 V and FT/FMAX of 30/70 GHz. Moreover, the AlGaN double channel HEMT showed a ON-state current density (IDS) of 0.7 A/mm, transconductance (Gm) of 117 mS/mm, and lower noise figure. The proposed AlGaN channel HEMT in this work is suitable for future high-power K-band microwave applications.