非阻塞I/O
钙钛矿(结构)
材料科学
卤化物
能量转换效率
带隙
光电子学
兴奋剂
光伏
甲脒
纳米技术
光伏系统
无机化学
化学
结晶学
电气工程
催化作用
工程类
生物化学
作者
Liming Li,Yajie Ma,Yousheng Wang,Qiaoyan Ma,Zixuan Wang,Zigan Yang,Meixiu Wan,Tahmineh Mahmoudi,Yoon‐Bong Hahn,Yaohua Mai
标识
DOI:10.1007/s40820-023-01088-4
摘要
Abstract NiO x -based inverted perovskite solar cells (PSCs) have presented great potential toward low-cost, highly efficient and stable next-generation photovoltaics. However, the presence of energy-level mismatch and contact-interface defects between hole-selective contacts (HSCs) and perovskite-active layer (PAL) still limits device efficiency improvement. Here, we report a graded configuration based on both interface-cascaded structures and p-type molecule-doped composites with two-/three-dimensional formamidinium-based triple-halide perovskites. We find that the interface defects-induced non-radiative recombination presented at HSCs/PAL interfaces is remarkably suppressed because of efficient hole extraction and transport. Moreover, a strong chemical interaction, halogen bonding and coordination bonding are found in the molecule-doped perovskite composites, which significantly suppress the formation of halide vacancy and parasitic metallic lead. As a result, NiO x -based inverted PSCs present a power-conversion-efficiency over 23% with a high fill factor of 0.84 and open-circuit voltage of 1.162 V, which are comparable to the best reported around 1.56-electron volt bandgap perovskites. Furthermore, devices with encapsulation present high operational stability over 1,200 h during T 90 lifetime measurement (the time as a function of PCE decreases to 90% of its initial value) under 1-sun illumination in ambient-air conditions.
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