Tunable Fabry-Pérot interferometer integrated in a silicon waveguide of an on-chip optical platform for long infrared wavelengths

深反应离子刻蚀 材料科学 波导管 光学 光电子学 干涉测量 透射率 梳状滤波器 光学滤波器 波长 堆栈(抽象数据类型) 微电子机械系统 蚀刻(微加工) 滤波器(信号处理) 反应离子刻蚀 图层(电子) 物理 电气工程 计算机科学 复合材料 程序设计语言 工程类
作者
Julia Wecker,Karla Hiller,Toni Dirk Großmann,Susann Hahn,Steffen Kurth,Christian Helke,Matthias Küchler,Danny Reuter,Jörg Martin,Alexander Weiß,Harald Kühn
标识
DOI:10.1117/12.2650524
摘要

As part of a future optical platform on-chip, we present a waveguide integrated tunable Fabry-Pérot Interferometer (FPI) for the long infrared wavelength range. The FPI consists of two parallel Bragg reflectors that are located at the ends of two waveguides facing each other. The waveguides are made of silicon and are suspended in air. The reflectors are realized as an alternating stack of silicon and air layers with high (H) and low (L) refractive index. The filter transmittance is evaluated by analytic calculations and electromagnetic finite difference time domain simulations. Filters with (HL)² layer stack show a full width half maximum of 270 nm and a peak transmittance of more than 25% at a wavelength of 9.4 μm at the first interference order in the simulation. It is evaluated by measurements. A MEMS actuator is used to tune the filter wavelength by changing the distance between both reflectors. A digital electrostatic actuator concept with a linear drive characteristic, designed for a large travel range up to 4 μm with a driving voltage of less than 30 V, is presented and evaluated together with the filter. The MEMS fabrication process for the structures is based on bonding and deep reactive ion etching (DRIE). The DRIE etch process was optimized, hereafter achieving a reduced roughness of less than 3 nm of the waveguide sidewalls. For transmission measurements the silicon waveguides are coupled to a laser source and a detector using optical fibers together with optical couplers on the chip. The filter performance was characterized in the range from 9μm to 9.4 μm.
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