纳米线
材料科学
碳纳米纤维
化学气相沉积
铟
纳米技术
成核
纳米纤维
砷化铟
碳纤维
汽-液-固法
半导体
化学工程
碳纳米管
光电子学
量子点
复合材料
化学
工程类
有机化学
复合数
作者
Muhammad Arshad,Lucia Sorba,Petra Rudolf,Cinzia Cepek
出处
期刊:Nanomaterials
[MDPI AG]
日期:2023-12-05
卷期号:13 (24): 3083-3083
被引量:2
摘要
The integration of carbon nanostructures with semiconductor nanowires holds significant potential for energy-efficient integrated circuits. However, achieving precise control over the positioning and stability of these interconnections poses a major challenge. This study presents a method for the controlled growth of carbon nanofibers (CNFs) on vertically aligned indium arsenide (InAs) nanowires. The CNF/InAs hybrid structures, synthesized using chemical vapor deposition (CVD), were successfully produced without compromising the morphology of the pristine nanowires. Under optimized conditions, preferential growth of the carbon nanofibers in the direction perpendicular to the InAs nanowires was observed. Moreover, when the CVD process employed iron as a catalyst, an increased growth rate was achieved. With and without the presence of iron, carbon nanofibers nucleate preferentially on the top of the InAs nanowires, indicating a tip growth mechanism presumably catalysed by a gold-indium alloy that selectively forms in that region. These results represent a compelling example of controlled interconnections between adjacent InAs nanowires formed by carbon fibers.
科研通智能强力驱动
Strongly Powered by AbleSci AI