单层
合金
带隙
半导体
薄脆饼
直接和间接带隙
化学气相沉积
拉曼光谱
化学
光电子学
纳米技术
制作
材料科学
冶金
光学
物理
医学
替代医学
病理
作者
Zhengchao Zhou,Xingchen Zhang,Xinya Chen,Zhihai Cheng,Zhiyong Wang
标识
DOI:10.1021/acs.inorgchem.3c04644
摘要
Modulating the band gap of two-dimensional (2D) transition metal dichalcogenide (TMDC) semiconductors is critical for their application in a wider spectral range. Alloying has been demonstrated as an effective method for regulating the band gap of 2D TMDC semiconductors. The fabrication of large-area 2D TMDC alloy films with centimeter-scale uniformity is fundamental to the application of integrated devices. Herein, we report a liquid-phase precursor one-step chemical vapor deposition (CVD) method for fabricating a MoxW1-xS2 alloy monolayer with a large size and an adjustable band gap. Good crystalline quality and high uniformity on a wafer scale enable the continuous adjustment of its band gap in the range of 1.8-2.0 eV. Density functional theory calculations provided a deep understanding of the Raman-active vibration modes of the MoxW1-xS2 alloy monolayer and the change in the conductivity of the alloy with photon energy. The synthesis of large-area MoxW1-xS2 alloy monolayers is a critical step toward the application of 2D layered semiconductors in practical optoelectronic devices.
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