Electrical Properties of Electrochemically Exfoliated 2D Transition Metal Dichalcogenides Transistors for Complementary Metal‐Oxide‐Semiconductor Electronics

Abstract The unique semiconducting characteristics of 2D materials, such as transition metal dichalcogenides (TMDs), have drawn significant interest in the field of electronic devices. However, the dependence of the device performance on the electrical properties of electrochemically exfoliated TMD nanoflakes remains unclear. In this study, the intrinsic electrical properties of diverse electrochemically exfoliated TMD nanoflakes are investigated and their applications in fully solution‐processed 2D electronics are explored. The study reveals that MoSe 2 and WS 2 nanoflakes are suitable candidates with moderate electron concentrations of 5.7 × 10 12 and 2.5 × 10 12 cm −2 , respectively. These moderate electron concentrations enable a low off‐state current and high on‐state current, leading to a large on–off ratio (> 10 6 ) for the fabricated transistors. Furthermore, moderate annealing can increase the mobility by one order of magnitude by reducing the contact resistance and improving charge transport. Additionally, the trap density is significantly reduced, leading to an improved stability. Finally, fully solution‐processed 2D complementary inverters with a high voltage gain of 60 are demonstrated. This study contributes to a growing understanding of the properties of 2D materials in terms of transistor performances and promotes the development of solution‐processed devices applicable in next‐generation electronics.