A Study on Oxygen Vacancy Resistance Mechanism of V2O5

Introduction: Due to its magnetic and semiconductor properties, V2O5 has shown tremendous potential in resistive switching memory. Method: This paper investigates the resistive mechanism of oxygen vacancies in V2O5. The formation energies of different oxygen vacancies are calculated. Results: The results show that oxygen vacancies tend to form single-component conductive filaments. In mixed oxygen vacancies clusters, the charge transfer characteristics and density of states of the V2O5-VO 13 vacancies are the most significant, which is consistent with the analysis of formation energy data. Conclusions: The charge transfer of cluster oxygen vacancies was calculated, showing that V atoms directly connected to oxygen vacancies tend to lose electrons, while adjacent oxygen atoms are more likely to gain electrons. In V2O5-VO 12 and V2O5-VO 13, the number of electrons obtained by O2 and O16 exceeds the average by 36.4% and 33.2%. Thus, the formation of oxygen vacancies effectively improves the resistance characteristics of the V2O5.