Robust Ferrimagnetism and Ferroelectricity in 2D ɛ‐Fe2O3 Semiconductor with Ultrahigh Ordering Temperature

2D single-phase multiferroic materials with the coexistence of electric and spin polarization offer a tantalizing potential for high-density multilevel data storage. One of the current limitations for application is the scarcity of the materials, especially those combine ferromagnetism and ferroelectricity at high temperatures. Here, robust ferrimagnetism and ferroelectricity in 2D ɛ-Fe