Trapping Effects in CdSiO 3 :In 3+ Long Afterglow Phosphor

Trapping effects in CdSiO3:In3+ long afterglow phosphor based on photoluminescence (PL) and thermoluminescence (TL) curves are studied. The results of TL show that two intrinsic defects associated with peaks at 346 and 418 K appear in the undoped CdSiO3 phosphor; whereas only one strong cadmium vacancy V''Cd defect associated with peak at 348 K appears in the Cd1−xInxSiO3 phosphor due to the chemical nonequivalent substitutions of Cd2+ ions by In3+ ions. This chemical nonequivalent substitution of In3+ ions into the CdSiO3 host produced the highly dense cadmium vacancy V''Cd trap level at 348 K, which resulted in the origin of the long afterglow phenomenon. The findings has enlarged the family of non-rare-earth doped long afterglow phosphors available, and offers a promising approach for searching long afterglow phosphor.