非金属
单层
空位缺陷
自旋电子学
磁矩
反铁磁性
材料科学
兴奋剂
石墨烯
凝聚态物理
吸附
铁磁性
电子结构
化学物理
自旋极化
纳米技术
化学
物理化学
物理
电子
光电子学
金属
冶金
量子力学
作者
Yandong Ma,Ying Dai,Meng Guo,Chengwang Niu,Jibao Lu,Baibiao Huang
摘要
Very recently, two-dimensional nanosheets of MoSe2, MoTe2 and WS2 were successfully synthesized experimentally [Science, 2011, 331, 568]. In the present work, the electronic and magnetic properties of perfect, vacancy-doped, and nonmetal element (H, B, C, N, O, and F) adsorbed MoSe2, MoTe2 and WS2 monolayers are systematically investigated by means of first-principles calculations to give a detailed understanding of these materials. It is found that: (1) MoSe2, MoTe2 and WS2 exhibit surprising confinement-induced indirect-direct-gap crossover; (2) among all the neutral native vacancies of MoSe2, MoTe2 and WS2 monolayers, only the Mo vacancy in MoSe2 can induce spin-polarization and long-range antiferromagnetic coupling; (3) adsorption of nonmetal elements on the surface of MoSe2, MoTe2 and WS2 nanosheets can induce a local magnetic moment; H-absorbed WS2, MoSe2, and MoTe2 monolayers and F-adsorbed WS2 and MoSe2 monolayers show long-range antiferromagnetic coupling between local moments even when their distance is as long as ∼12 Å. These findings are a useful addition to the experimental studies of these new synthesized two-dimensional nanosheets, and suggest a new route to facilitate the design of spintronic devices for complementing graphene. Further experimental studies are expected to confirm the attractive predictions.
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