Performance Evaluation of an Integrated Optoelectronic Receiver

This work describes the optical and electrical characterization of an integrated optoelectronic receiver. The receiver iscomposed of a photodiode and a transimpedance amplifier, both fabricated in silicon technology using a 0.8 μmBiCMOS process. The total area occupied by the photodiode is of 10,000 μm2. In a first step, the generatedphotocurrent of the photodiode is measured for the wavelengths of 780 nm and 830 nm at different levels of opticalpower. In a second step, the responsivity and quantum efficiency parameters of the photodiode are computed. Finally,an electrical measurement including the transimpedance amplifier is achieved. A potential application for thisoptoelectronic receiver is on the first optical communications window.