X射线光电子能谱
微观结构
化学气相沉积
微晶
无定形固体
氢
碳膜
等离子体增强化学气相沉积
氧化物
分析化学(期刊)
材料科学
碳纤维
傅里叶变换红外光谱
薄膜
化学
化学工程
纳米技术
冶金
结晶学
复合材料
有机化学
工程类
复合数
作者
Yong Chun Kim,Hyung Ho Park,John S. Chun,Won Jong Lee
标识
DOI:10.1016/0040-6090(94)90238-0
摘要
Aluminum oxide films were deposited on silicon wafers by plasma-enhanced chemical vapor deposition, using trimethylaluminum, N2O and He gases. The chemical composition, states of functional groups and microstructure of the aluminum oxide films were investigated using FTIR, XPS, AES and TEM. Etch rates were measured and related to the microstructure of the films. It was found that carbon and hydrogen atoms are incorporated less at higher deposition temperatures and are almost completely removed as gas phases, such as CO2 and H2O, by post-deposition heat treatment at 800 °C in an oxygen environment. Carbon atoms incorporated into the films are in the chemical form of AlCH3 or AlCOOH, and the atomic concentration varies from 2% at 300 °C to 5% at 120 °C. Hydrogen atoms are in the chemical form of AlOH, and the atomic concentration estimated from the absorbance FTIR band of the OH stretching mode varies from about 7% at 300 °C to about 28% at 120 °C. The aluminum oxide films deposited at 300 °C have a microcrystalline structure of hydrogen-stabilized γ-Al2O3 with an O/Al ratio of 1.6, whereas those deposited at 120 °C have an amorphous structure. Etching properties of the films were related to the change in the microstructure.
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