Annealing Enhancement Effect by Light Illumination on Proton Irradiated Cu(In,Ga)Se2 Thin-Film Solar Cells

In this paper, we investigated the high radiation tolerance of copper indium gallium di-selenide (CIGS) thin-film solar cells by conducting in situ measurements of short circuit current and open circuit voltage of CIGS thin-film solar cells during and after proton irradiation under short circuit condition. We found that the annealing rate of proton-induced defects in CIGS thin-film solar cells under light illumination with an AM0 solar simulator is higher than that under dark conditions. The activation energy of proton-induced defects in the CIGS thin-film solar cells with (without) light illumination is 0.80 eV (0.92 eV), which implies on enhanced defect annealing rate in CIGS thin-film solar cells due to minority-carrier injection.