量子点
光电子学
发光二极管
二极管
材料科学
激子
图层(电子)
纳米技术
物理
量子力学
作者
Jeonghun Kwak,Wan Ki Bae,Donggu Lee,Insun Park,Jaehoon Lim,Myeongjin Park,Hyunduck Cho,Heeje Woo,Do Y. Yoon,Kookheon Char,Seonghoon Lee,Changhee Lee
出处
期刊:Nano Letters
[American Chemical Society]
日期:2012-04-02
卷期号:12 (5): 2362-2366
被引量:880
摘要
We report highly bright and efficient inverted structure quantum dot (QD) based light-emitting diodes (QLEDs) by using solution-processed ZnO nanoparticles as the electron injection/transport layer and by optimizing energy levels with the organic hole transport layer. We have successfully demonstrated highly bright red, green, and blue QLEDs showing maximum luminances up to 23,040, 218,800, and 2250 cd/m(2), and external quantum efficiencies of 7.3, 5.8, and 1.7%, respectively. It is also noticeable that they showed turn-on voltages as low as the bandgap energy of each QD and long operational lifetime, mainly attributed to the direct exciton recombination within QDs through the inverted device structure. These results signify a remarkable progress in QLEDs and offer a practicable platform for the realization of QD-based full-color displays and lightings.
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