兴奋剂
钙钛矿(结构)
材料科学
卤化物
掺杂剂
纳米晶
光电子学
价(化学)
载流子
带隙
费米能级
离子
电子迁移率
纳米技术
无机化学
化学
结晶学
电子
有机化学
物理
量子力学
作者
Shu Zhou,Yaping Ma,Guodong Zhou,Xin Xu,Minchao Qin,Yuhao Li,Yao-Jane Hsu,Hanlin Hu,Gang Li,Ni Zhao,Jianbin Xu,Xinhui Lu
出处
期刊:ACS energy letters
[American Chemical Society]
日期:2019-01-21
卷期号:4 (2): 534-541
被引量:92
标识
DOI:10.1021/acsenergylett.8b02478
摘要
Heterovalent doping of halide perovskite nanocrystals (NCs), offering potential tunability in optical and electrical properties, remains a grand challenge. Here, we report for the first time a controlled doping of monovalent Ag+ into CsPbBr3 NCs via a facile room-temperature synthesis method. Our results suggest that Ag+ ions act as substitutional dopants to replace Pb2+ ions in the perovskite NCs, shifting the Fermi level down toward the valence band and in turn inducing a heavy p-type character. Field effect transistors fabricated with Ag+-doped CsPbBr3 NCs exhibit 3 orders of magnitude enhancement in hole mobility at room temperature, compared with undoped CsPbBr3 NCs. Low-temperature electrical studies further confirm the influence of Ag+ doping on the charge-carrier transport. This work demonstrates the tunability of heterovalent doping on the electrical properties of halide perovskite NCs, shedding light on their future applications in versatile optoelectronic devices.
科研通智能强力驱动
Strongly Powered by AbleSci AI