Efficiency enhancement of InGaN/GaN light-emitting diodes with a p-i-n electron blocking layer

In this paper, we proposed a p-i-n AlGaN EBL, which is easy to realize in epitaxy, to enhance the electron confinement and improve the hole injection efficiency. The physical and optical properties of GaN-based MQW LEDs with the conventional EBL are also investigated comparatively. The simulation results show that the LEDs with the p-i-n EBL exhibit much higher output power and smaller efficiency droop at high current as compared to those with the traditional EBL due to the enhancement of the electron confinement and improvement of the hole injection from p-type region, which are induced by the strong reverse electrostatic fields in the p-i-n EBL.