Study the JSC loss of full area SHJ solar cells caused by edge recombination

We have demonstrated that the edge recombination effect exists in full area industrial silicon heterojunction (SHJ) solar cells, which can cause significant short-circuit current density (JSC) loss. The mechanism behind this observation was studied using different SHJ cell structures. We demonstrated further that this JSC loss effect can be suppressed effectively by simply controlling the gap between the edge of the transparent conductive oxide layer and that of the cell. Using this strategy, the average JSC of our state-of-art SHJ solar cells was enhanced by 0.36 mA/cm2, resulting in an average efficiency gain of 0.28% absolute.