Doping Profile Control in Si MBE film with Sb Ion Doping

Arbitrary doping profiles with abrupt transitions have been produced in Si MBE films by means of Sb ion doping. The ion doping could control the doping level in the films over the range 1016–1020 cm-3. The accuracy of controlling the doped layer thickness was within a couple of 100 A. The doping levels of the doped Sb determined by neutron activation analysis, backscattering measurement, and four point probe technique were all in good agreement. It was also found from the doping profiles determined by the three measurements that the Sb atoms doped by the ion doping did not segregate to the surface of the epitaxial film.