Post ion implantation photoresist residue removal study

Post ion implantation PR (photoresist) residue removal is a very critical process to obtain higher device yield and enhance circuit reliability. Traditional wet batch cleaning is not recommended for the poor particle performance and pattern damage risk. Instead, Wet SWC (single wafer cleaning) are wildly used. This paper studied the PR residue wet strip process after ions implantation. The SWC can improve the particle performance of the wafers comparing to the batch cleaning. The new chemical was introduced to improve capability of PR residue removal. Finally, the encouraging yield improvement was obtained by the optimized wet SWC process.