Influence of Process Parameters on the Thermophysical Properties of C/C‐SiC

This paper reports upon the influence of various C-fibers, precursors and annealing process parameters of C/C as well as the microstructure, obtained by pretreating C-fibers, on the thermophysical properties of C/C-SiC. Therefore, C-fabrics were used as received or thermally pretreated and submitted to LSI-processing. Another route is to graphitize the C/C intermediate with subsequent siliconizing [4,5]. Due to the fact that the thermal conductivity (TC) of carbon fibers after graphitization can be higher than that of SiC the dominating contribution to the TC of the composite is expected from the fibers. Because of the pronounced orientation of the fibers in one plane there is a strong anisotropy of the TC parallel and transversal to main fiber orientation, whereby the values parallel to the fibers are by a factor 2 to 3 higher compared to transversal direction [6]. In this paper, only the results of measurements in transversal direction are presented.