CMOS芯片
跨阻放大器
放大器
电气工程
核电子学
噪音(视频)
数码产品
模拟前端
物理
消散
前端和后端
集成电路
计算机科学
电子工程
运算放大器
工程类
人工智能
图像(数学)
操作系统
热力学
作者
Rafał Kłeczek,P. Gryboś,R. Szczygieł
标识
DOI:10.1109/mixdes.2015.7208529
摘要
The level of requirements for a readout front-end electronics dedicated for X-ray imaging applications, such as: high count rate ability of input pulses, low noise, low power dissipation and low silicon area occupation noise, is still increasing. The question: what one can do to minimize silicon area and keep front-end electronics analog parameters at a desirable level at the same time, is still important especially in pixel based architecture imaging applications. We report on the design of a readout front-end electronics analog part in CMOS 40 nm technology dedicated for pixel semiconductor detectors. It consists only a charge sensitive amplifier operating in transimpedance mode, which feedback circuit is based on a Krummenacher architecture. It has power dissipation below tens of μW, noise performance ENC around 100 e - rms and pulse peaking time t p around few ns.
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