材料科学
负偏压温度不稳定性
压力(语言学)
不稳定性
光电子学
复合材料
作者
Aivars J. Lelis,Daniel B. Habersat,Fatimat Olaniran,Brian Simons,J.M. McGarrity,F. Barry McLean,Neil Goldsman
出处
期刊:MRS Proceedings
[Springer Nature]
日期:2006-01-01
卷期号:911 (1): 5-10
被引量:19
标识
DOI:10.1557/proc-0911-b13-05
摘要
We have observed a gate-bias stress induced instability in both the threshold voltage of SiC MOSFETs and the flatband voltage of SiC MOS capacitors. The magnitude of this bias stress-induced instability generally increases linearly with log time, with no saturation of the effect observed, even out to 100,000 seconds. The magnitude also increases with increasing gate field. A positive gate-bias stress causes a positive shift and a negative gate-bias stress causes a negative shift, consistent with electron tunneling into or out of oxide traps near the SiC / SiO2 interface as opposed to mobile ions drifting across the gate oxide. The effect is repeatable.
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