Growth of Epitaxial ZnO Thin Films by Organometallic Chemical Vapor Deposition

Organometallic chemical vapor deposition of ZnO on sapphire, using the reaction of diethylzinc with H 2 O / H 2 , N 2 O / N 2 , and CO 2 / H 2 oxidizing gas systems, has been studied. Epitaxial films have been achieved at temperatures of 400° and 730°C, respectively, in the first two systems. The films have been characterized using scanning electron microscopy (SEM), reflection electron diffraction (RED), and surface acoustic wave techniques.