Some investigations on oval defects in MBE-grown GaAs

The results of studies on the morphological features and chemical composition of the prominent types of oval defects present on GaAs and GaAlAs epitaxial layers grown by molecular beam epitaxy (MBE) are reported. Based on these studies, a possible mechanism for the formation of cored oval defects is proposed. The influence of this defect on the performance of MODFETs is also discussed.