量子点
材料科学
磷化铟
光电子学
光致发光
绿灯
电致发光
发光二极管
发光
铟
量子产额
硫化锌
成核
纳米技术
锌
光学
图层(电子)
化学
砷化镓
蓝光
荧光
冶金
有机化学
物理
作者
Qianqian Wu,Fan Cao,Sheng Wang,Yimin Wang,Zhongjiang Sun,Jingwen Feng,Yang Liu,Lin Wang,Qiang Cao,Yunguo Li,Bin Wei,Wai‐Yeung Wong,Xuyong Yang
标识
DOI:10.1002/advs.202200959
摘要
Indium phosphide (InP) based quantum dots (QDs) have been known as an ideal alternative to heavy metals including QDs light emitters, such as cadmium selenium (CdSe) QDs, and show great promise in the next-generation solid-state lighting and displays. However, the electroluminescence performance of green InP QDs is still inferior to their red counterparts, due to the higher density of surface defects and the wider particle size distribution. Here, a quasi-shell-growth strategy for the growth of highly luminescent green InP/ZnSe/ZnS QDs is reported, in which the zinc and selenium monomers are added at the initial nucleation of InP stage to adsorb on the surface of InP cores that create a quasi-ZnSe shell rather than a bulk ZnSe shell. The quasi-ZnSe shell reduces the surface defects of InP core by passivating In-terminated vacancies, and suppresses the Ostwald ripening of InP core at high temperatures, leading to a photoluminescence quantum yield of 91% with a narrow emission linewidth of 36 nm for the synthesized InP/ZnSe/ZnS QDs. Consequently, the light-emitting diodes based on the green QDs realize a maximum luminance of 15606 cd m-2 , a peak external quantum efficiency of 10.6%, and a long half lifetime of > 5000 h.
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