太赫兹辐射
材料科学
半金属
光子学
光电子学
超短脉冲
太赫兹光谱与技术
石墨烯
Weyl半金属
电子迁移率
等离子体子
Dirac(视频压缩格式)
物理
带隙
光学
纳米技术
激光器
核物理学
中微子
作者
Zijie Dai,Manukumara Manjappa,Yunkun Yang,Thomas Cai Wei Tan,Bo Qiang,Song Han,Liang Jie Wong,Faxian Xiu,Weiwei Liu,Ranjan Singh
标识
DOI:10.1002/adfm.202011011
摘要
Abstract The Dirac semimetal cadmium arsenide (Cd 3 As 2 ), a 3D electronic analog of graphene, has sparked renewed research interests for its novel topological phases and excellent optoelectronic properties. The gapless nature of its 3D electronic band facilitates strong optical nonlinearity and supports Dirac plasmons that are of particular interest to realize high‐performance electronic and photonic devices at terahertz (1 THz = 4.1 meV) frequencies, where the performance of most dynamic materials are limited by the tradeoff between power‐efficiency and switching speed. Here, all‐optical, low‐power, ultrafast broadband modulation of terahertz waves using an ultrathin film (100 nm, λ/3000) of Cd 3 As 2 are experimentally demonstrated through active tailoring of the photoconductivity. The measurements reveal the photosensitive metallic behavior of Cd 3 As 2 with high terahertz electron mobility of 7200 cm 2 (Vs) −1 . In addition, optical fluence dependent ultrafast charge carrier relaxation (15.5 ps), terahertz mobility, and long momentum scattering time (157 fs) comparable to superconductors that invoke kinetic inductance at terahertz frequencies are demonstrated. These remarkable properties of 3D Dirac topological semimetal envision a new class of power‐efficient, high speed, compact, tunable electronic, and photonic devices.
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