凝聚态物理
莫特绝缘子
扫描隧道显微镜
材料科学
电子相关
量子隧道
光电发射光谱学
物理
纹理(宇宙学)
电子
X射线光电子能谱
量子力学
核磁共振
计算机科学
图像(数学)
人工智能
作者
Yi Chen,Wei Ruan,Meng Wu,Shujie Tang,Hyejin Ryu,Hsin‐Zon Tsai,Ryan Lee,Salman Kahn,Franklin Liou,Caihong Jia,Oliver R. Albertini,Hongyu Xiong,Tao Jia,Zhi Liu,Jonathan A. Sobota,Amy Liu,Joel E. Moore,Zhi‐Xun Shen,Steven G. Louie,Sung‐Kwan Mo,Michael F. Crommie
出处
期刊:Cornell University - arXiv
日期:2019-04-24
被引量:1
标识
DOI:10.1038/s41567-019-0744-9
摘要
Mott insulating behavior is induced by strong electron correlation and can lead to exotic states of matter such as unconventional superconductivity and quantum spin liquids. Recent advances in van der Waals material synthesis enable the exploration of novel Mott systems in the two-dimensional limit. Here we report characterization of the local electronic properties of single- and few-layer 1T-TaSe2 via spatial- and momentum-resolved spectroscopy involving scanning tunneling microscopy and angle-resolved photoemission. Our combined experimental and theoretical study indicates that electron correlation induces a robust Mott insulator state in single-layer 1T-TaSe2 that is accompanied by novel orbital texture. Inclusion of interlayer coupling weakens the insulating phase in 1T-TaSe2, as seen by strong reduction of its energy gap and quenching of its correlation-driven orbital texture in bilayer and trilayer 1T-TaSe2. Our results establish single-layer 1T-TaSe2 as a useful new platform for investigating strong correlation physics in two dimensions.
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