石墨烯
材料科学
光电探测器
光电效应
异质结
光探测
光电子学
化学浴沉积
纳米技术
薄膜
作者
Feier Fang,Henan Li,Huizhen Yao,Ke Jiang,Zexiang Liu,Congjian Lin,Fuming Chen,Ye Wang,Lai Liu
出处
期刊:Nanomaterials
[Multidisciplinary Digital Publishing Institute]
日期:2019-08-03
卷期号:9 (8): 1122-1122
被引量:16
摘要
Two-dimensional (2D) metal dichalcogenides have attracted considerable attention for use in photoelectric devices due to their unique layer structure and strong light-matter interaction. In this paper, vertically grown SnS2 nanosheets array film was synthesized by a facile chemical bath deposition (CBD). The effects of deposition time and annealing temperature on the quality of SnS2 films was investigated in detail. By optimizing the preparation conditions, the SnS2 array film exhibited efficient photoelectric detection performance under sunlight. Furthermore, in order to improve the performance of the photodetector based on SnS2 nanosheets film, a transparent graphene film was introduced as the hole-transport layer by wet-chemical method directly transferring techniques. Graphene/SnS2 nanosheets array film heterojunction photodetectors exhibit enhanced photoresponsivity. The light on/off ratio of the photodetector based on graphene/SnS2 was 1.53, about 1.4 times higher than that of the pristine SnS2 array films. The improved photoresponse performance suggested that the effective heterojunction between vertical SnS2 nanosheets array film and graphene suppresses the recombination of photogenerated carriers. The results indicate that the graphene/SnS2 heterojunction photodetectors have great potential in photodetection devices.
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