Two-Inch Aluminum Nitride (AIN) Single Crystal Growth for Commercial Applications

Aluminum Nitride (AlN) is an Ultra-wide Bandgap (UWBG) semiconductor that attracts significant interest for its potential application for high power switches, high power density, high frequency and high operating temperature for rf. Currently, AlN substrates are being used for ultraviolet (UV) light emitters at wavelengths shorter than 300nm including UVC Light Emitting Diodes (UVC LED) as well as laser diodes. Successful commercialization of the aluminum nitride as an UWBG substrate depends on several factors such as substrate availability, size, quality, and cost. Here we report on the current status of the bulk growth of AlN single-crystals as well as their subsequent processing for making substrates.