Numerical simulations of potential-induced degradation

The leakage current produced in TFPV cells leads to potential-induced degradation at the cell level. Various experimental methods are generally employed to investigate the progression of potential-induced degradation in cells and modules. However, these methods are quite cumbersome and cause wastages of time and expensive resources. In this chapter, the simulation-based analysis investigates PID progression in TFPV cell-based variety of absorber layers. Furthermore, the analysis is presented in terms of the rising levels of PID in simulated cells. The analysis yields an important observation that the PID effect in TFPVs is dependent on the absorber layers' properties. The presented analysis is useful for the assessment and prediction of the PID effect at the cell level.