计算机科学
干扰(通信)
可靠性(半导体)
与非门
计算机数据存储
闪光灯(摄影)
闪存
降级(电信)
简单(哲学)
计算机工程
电子工程
可靠性工程
分布式计算
算法
计算机硬件
电信
逻辑门
工程类
哲学
艺术
视觉艺术
功率(物理)
频道(广播)
物理
认识论
量子力学
作者
Reza Ashrafi,Alí Emre Pusane
出处
期刊:Iet Communications
[Institution of Engineering and Technology]
日期:2018-05-03
卷期号:12 (14): 1671-1677
被引量:1
标识
DOI:10.1049/iet-com.2017.0440
摘要
NAND flash memories, due to their several advantageous characteristics, have recently dominated the data storage industry and its global market. Currently, multi-level cell memories, in which each cell can store more than one bit of data resulting in higher data storage capacities, have gained a considerable amount of research interest. However, this comes at the cost of several limitations and increased performance degradation. Various studies have shown that among several error sources in multi-level cell memories, inter-cell interference is the most significant one. Therefore, to mitigate the devastating effect of the interference, simple, feasible, and yet efficient equalisation techniques become essential for achieving desired data reliability. In this study, first, a thorough analysis on deriving the distribution of the interference-free and interference-affected data is carried out. Then, novel low-complexity equalisation methods are proposed, and their beneficial complexity-performance trade-offs compared with the existing techniques are illustrated. Finally, simulation results are presented to show that the proposed algorithms considerably improve the error performance, while maintaining the low-complexity constraints.
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