Machine‐Learning‐Designed BCZT–SBT Heterointerface Unlocks Fatigue‐Resistant Energy Storage

材料科学 电容器 电介质 光电子学 储能 肖特基二极管 青铜色 工程物理 极化(电化学) 钙钛矿(结构) 超短脉冲 电压 外延 等效串联电阻 纳米技术 工作(物理) 格子(音乐)
作者
Zixiong Sun,Tiancheng Luo,Pan Gao,Hongyu Yang,Peiyao Sun,Yao Li,Hongmei Jing,Ye Tian,Qi He,Zhuo Wang,Daniel Q. Tan
出处
期刊:Advanced Materials [Wiley]
卷期号:38 (8): e19635-e19635 被引量:9
标识
DOI:10.1002/adma.202519635
摘要

Abstract Dielectric capacitors are attractive for advanced energy storage owing to their ultrafast charge–discharge capability, yet their practical use is hindered by severe fatigue under repeated operation at ultrahigh electric fields. Achieving fatigue‐free performance therefore represents a key challenge in dielectric design. Here, guided by machine learning (ML), SrBi 2 Ta 2 O 9 (SBT) is introduced into Ba 0.85 Ca 0.15 Zr 0.1 Ti 0.9 O 3 (BCZT) to construct a (1‐ x )BCZT‐ x SBT solid solution. At x = 0.10, the coexistence of perovskite and tungsten bronze phases gives rise to an epitaxial interfacial layer only a few unit cells thick, formed by lattice mismatch. Atomic‐scale analyses reveal that this hetero‐barrier effectively suppresses carrier migration, while the tungsten bronze phase promotes polarization homogenization, together enhancing both voltage endurance and reliability. As a result, 0.90BCZT‐0.10SBT achieves a recoverable energy density ( W rec ) of 9.94 J cm −3 with 92.1% efficiency, and more strikingly, maintains stable performance after 10 9 charge–discharge cycles without degradation, enabled by an elevated Schottky barrier. This work not only uncovers the atomic origin of fatigue resistance in lead‐free dielectrics but also establishes a ML‐guided strategy for designing next‐generation high‐performance, fatigue‐free capacitors for reliable energy storage.
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