Investigation of the structural and morphological features of TiO2:8OBA composites for MIS semiconductor diodes

In this study, a liquid crystal 8OBA-doped TiO2 composite was formed on a p-Si substrate using the ultrasonic spray coating method. The characterization of the un-doped and doped films produced was carried out by SEM-EDS, XRD and UV–vis measurements. SEM/EDS analysis showed that the TiO2:8OBA composite completed the formation of a layer on the glass surface and exhibited a homogeneous distribution throughout the surface. XRD analysis of TiO2:8OBA composites showed that anatase and rutile crystal phases are belonging to TiO2 and CH based phase indicating 8OBA. In addition, as a result of UV–vis analysis, the optical band gap of 8OBA:TiO2 composite was calculated as 2.82 eV. Besides, the diode application of 8OBA doped and un-doped TiO2 thin film was performed. Charge transport processes of the diode were studied in detail by taking current–voltage measurements. The ideality factor, barrier height, series resistance and parallel resistance values were extracted using different methods.