High-Mobility P-Type Boron Carbon Nitride with Wafer-Scale Uniformity

A long-standing bottleneck in realizing two-dimensional (2D) CMOS technology lies in the lack of high-performance p-type semiconductors. Strong electron-doping tendencies, orbital localization, and pronounced hole scattering have collectively impeded the development of stable, efficient p-type 2D materials. Here, we report the epitaxy growth of boron carbon nitride (BCN) as a high-performance p-type semiconductor. By engineering the dehydrogenation and surface reaction pathways of monomethyl ammonia borane (MMAB) and ammonia borane (AB), we overcome a critical barrier: the spatial and temporal mismatch in the delivery of B, C, and N atoms, which disrupts lattice uniformity. The result is a wafer-scale, monolayer 2D BCN with atomically substituted carbon and dimers interspersed between continuously crystallized and locally distorted boron nitride lattices, leading to a sizable bandgap of 1.90 eV. Wafer-scale arrays of p-type BCN FETs exhibit benchmark performance, with a field-effect hole mobility of 100 cm² V⁻¹s⁻¹, on-current of 0.9 mAμm⁻¹, on/off ratio of 10⁸, and threshold voltage of −0.45 V, surpassing current state-of-the-art p-type 2D semiconductors. Our findings establish BCN as a scalable and stable p-type platform, bridging a critical gap in the materials palette for 3D monolithic integration of complementary electronics.