Epitaxy and Strain Engineering of Halide Perovskites

In this chapter, we introduce the progresses in the epitaxy and strain engineering of halide perovskites. In the design of advanced optoelectronic and electronic devices featured by coherent heterostructures and superlattices, epitaxy is the most common and effective approach. Recent experimental demonstrations of epitaxy in halide perovskites have suggested that it is possible to produce high-quality halide perovskite heterostructures with controlled defects and density. Epitaxy has also brought ample opportunities in using strain to engineer the physical properties or discover exotic uncharged phases of perovskite halide. On route to developing scalable solutions for superior perovskite devices, a few technical challenges must be addressed.