Solution‐Processed PTCDI‐C8 Crystalline Wire: Dual Role as Mask and Active Layer for Organic Transistors with Increased Switching Speeds

Abstract Organic field‐effect transistors (OFETs) have been extensively studied over the past decades because of their suitability for low‐cost, large‐area, and flexible electronics. However, improvements are needed to satisfy the demands of high‐speed applications. The switching speed of a logic device is affected by the charge‐carrier mobility ( µ ) and the square of the channel length ( L ) at a given gate–source bias. Therefore, increasing µ and/or reducing L are crucial for achieving high‐speed OFET‐based digital circuits. In this study, an n ‐type OFET is fabricated with increased switching speed via a dual‐role approach involving solution‐grown, highly ordered single‐crystalline N , N' ‐dioctyl‐3,4,9,10‐perylenetetracarboxylic diimide (PTCDI‐C 8 ) wires, which serve as a mask for short‐channel formation up to the microscale and an active layer with enhanced charge mobility. Additionally, the performance of the n ‐type short‐channel OFET and resistive‐load‐type inverters is evaluated. For comparative purposes, long‐channel (50 µm) devices with PTCDI‐C 8 wires and short‐channel devices with a PTCDI‐C 8 film are fabricated and the device performance is analyzed. The short‐channel device with the PTCDI‐C 8 wires exhibits a significantly higher switching speed. Thus, the dual‐role approach is a simple and straightforward method for fabricating short‐channel devices, paving the way for further advancements in OFET technology requiring high switching speeds.