Nonvolatile resistive switching memory behavior of the TiOx-based memristor

Memristors represent cutting-edge technology for extensive applications in integrated electronic devices, high-performance computing, digital and analog circuitry, and artificial intelligence. In this study, we fabricated a memristor device using a thin titanium oxide (TiOx) film as a functional layer by magnetron sputtering. We proposed a physical model to explain the device's resistive switching (RS) behavior based on a comprehensive analysis of conductance derived from current-voltage (I-V) curves. We found that the device exhibited improved resistance switching ratio, durability, and low operating voltage, which are desirable for high-density memory applications. We also revealed the roles of the space charge-limited current (SCLC) mechanism, Ohmic conduction in the RS process, and the formation and rupture of conductive filaments of silver and oxygen vacancies. Our findings demonstrate the effectiveness of TiOx as a functional layer and the importance of magnetron sputtering as a fabrication method for enhancing the performance of memristive devices. Our study also advances the mechanistic understanding of RS and highlights the potential of metal oxides in memristor technology. This research propels the ongoing exploration of innovative materials to enhance memristive devices' functionality and application scope in various technological domains.