电阻器
CMOS芯片
电气工程
压控振荡器
电容器
补偿(心理学)
电压
修剪
频率补偿
温度系数
材料科学
极性(国际关系)
光电子学
电子工程
物理
工程类
化学
生物化学
结构工程
精神分析
细胞
心理学
作者
Sining Pan,Xiaomeng An,Zheru Yu,Hui Jiang,Kofi A. A. Makinwa
出处
期刊:IEEE Journal of Solid-state Circuits
[Institute of Electrical and Electronics Engineers]
日期:2023-11-07
卷期号:58 (12): 3450-3458
被引量:5
标识
DOI:10.1109/jssc.2023.3322307
摘要
<p>This article presents the design and implementation of a compact CMOS RC frequency reference. It consists of a frequency-locked loop (FLL) that locks the period of a voltage-controlled oscillator (VCO) to the time an RC network takes to charge to a reference voltage. Conventionally, an RC time constant with a near-zero temperature coefficient (TC) is realized by using a trimmed network of resistors with different TCs. In this work, such a network is used to realize a temperature-dependent reference voltage whose TC cancels that of a single-resistor RC time constant. Compared with the conventional approach, which requires resistors with TCs of opposite polarity, the proposed approach can be implemented with resistors with TCs of similar polarity, and so it can be implemented in most CMOS processes. To compensate for RC spread, a trimmed capacitor is used to adjust the nominal frequency. Two prototype chips were made, one based on p- /n-polysilicon resistors and other based on silicided/p-diffusion resistors. Fabricated in a standard 180-nm CMOS technology, the polysilicon-based prototype has an active area of 0.01 mm2 and an absolute inaccuracy of ±2800 ppm from -45 °C to 125 °C with a fixed TC-trim and a one-point frequency trim. After one week of accelerated aging at 150 °C, however, significant drift (5000 ppm) was observed. The diffusion-based prototype exhibits greater inaccuracy (±14 400 ppm) but much less drift (600 ppm).</p>
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