Modeling the effects of graded and abrupt mole fraction profiles in pBn and nBn HgCdTe barrier detectors

We present a numerical simulation study at 200K of pBn and nBn Hg_1−xCd_xTe barrier detectors, focused on the effects of the composition profile on the J-V characteristics in dark. Considering a conventional barrier detector structure with three regions (absorber, barrier, cap), we discuss how the J-V characteristics are affected by the steepness of the cap/barrier and barrier/absorber interfaces, especially in the nBn configuration.