自旋电子学
矫顽力
材料科学
铁磁性
磁化
凝聚态物理
非易失性存储器
切换时间
电流密度
光电子学
磁场
物理
量子力学
作者
Gaojie Zhang,Hao Wu,Yang Li,Jia Wen,Binping Xiao,Wenfeng Zhang,Haixin Chang
出处
期刊:Cornell University - arXiv
日期:2023-08-23
标识
DOI:10.1021/acsmaterialslett.3c01090
摘要
Room-temperature electrically-tuned coercivity and nonvolatile multi-states magnetization switching is crucial for next-generation low-power 2D spintronics. However, most methods have limited ability to adjust the coercivity of ferromagnetic systems, and room-temperature electrically-driven magnetization switching shows high critical current density and high power dissipation. Here, highly-tunable coercivity and highly-efficient nonvolatile multi-states magnetization switching are achieved at room temperature in single-material based devices by 2D van der Waals itinerant ferromagnet Fe$_3$GaTe$_2$. The coercivity can be readily tuned up to ~98.06% at 300 K by a tiny in-plane electric field that is 2-5 orders of magnitude smaller than that of other ferromagnetic systems. Moreover, the critical current density and power dissipation for room-temperature magnetization switching in 2D Fe$_3$GaTe$_2$ are down to ~1.7E5 A cm$^{-2}$ and ~4E12 W m$^{-3}$, respectively. Such switching power dissipation is 2-6 orders of magnitude lower than that of other 2D ferromagnetic systems. Meanwhile, multi-states magnetization switching are presented by continuously controlling the current, which can dramatically enhance the information storage capacity and develop new computing methodology. This work opens the avenue for room-temperature electrical control of ferromagnetism and potential applications for vdW-integrated 2D spintronics.
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