Improving the thermoelectric performance of p-type (Bi x Sb 1− x ) 2 Te 3 thin films via tuning the Bi x Sb 1− x layer

Through annealing the precursor layer Bi x Sb 1− x combined with thickness variation, the Seebeck coefficient and electrical conductivity are increased simultaneously in (Bi x Sb 1− x ) 2 Te 3 . A resultant high PF of 37.78 μW cm −1 K −2 is obtained.