Investigation of temporal characteristics of photosensitive heterostructures based on gallium arsenide and silicon

The paper briefly describes the methodology for studying the temporal characteristics of near-IR photodiode structures under the influence of pulsed radiation from a semiconductor laser with a wavelength of 1100 and 1320 nm. The results of studying the response time of multilayer photosensitive Au-nCdS-nSi-pCdTe-Au and Au-nInP-nCdSνGaAs:O-Au structures with potential barriers are presented. It has been experimentally shown that the structures under study are not inferior in response time to known analogs based on gallium arsenide and silicon heterostructures, and can also be used in a wide optical range.