激光阈值
激光器
光电子学
极化子
材料科学
光子学
钙钛矿(结构)
光子
光学
物理
波长
化学
结晶学
作者
Chen Zou,Xuhui Cao,Zixiang Wang,Yichen Yang,Yaxiao Lian,Baodan Zhao,Dawei Di
出处
期刊:Science Advances
[American Association for the Advancement of Science]
日期:2025-01-10
卷期号:11 (2)
被引量:1
标识
DOI:10.1126/sciadv.adr8826
摘要
Solution-processed semiconductor lasers are next-generation light sources for large-scale, bio-compatible and integrated photonics. However, overcoming their performance-cost trade-off to rival III-V laser functionalities is a long-standing challenge. Here, we demonstrate room-temperature continuous-wave perovskite polariton lasers exhibiting remarkably low thresholds of ~0.4 W cm −2 , enabled by a variable single-crystal perovskite microcavity. The threshold outperforms state-of-the-art III-V lasers by ~30 times under optical pumping, and is exceptional among solution-processed lasers. The ultralow-threshold lasing arises from steady-state exciton-polariton condensation, a macroscopic quantum phenomenon akin to Bose-Einstein condensation. The steady-state condensation is attained by fine-tuning the cavity photon-exciton energy separation near the degeneracy point for strong light-matter interactions. These mechanisms enabled the initial demonstration of an indirectly injected perovskite laser chip powered by a gallium nitride light-emitting diode. Our findings create exciting avenues toward on-chip integration of solution-processed lasers, opening opportunities for lasing with ultralow energy consumption and unprecedented performance.
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