Improving the sensing performance of rambutan-like W18O49 based gas sensor for n-butanol by Ni doping

Element doping can improve the gas sensing performance of metal oxide semiconductor (MOSs). In this paper, the rambutan-like Ni-doped W18O49 are synthesized by one-step solvothermal route. The prepared Ni0.05W18O49 possesses larger specific surface area (130.5 m2g-1) and more plentiful oxygen vacancy than the pristine sample. Interestingly, compared with other sensors, the Ni0.05W18O49 sensor has the highest response (182.4) for 50 ppm n-butanol at 160℃ with short response-recovery time (14 s / 241 s). Moreover, the selectivity test shows that the Ni0.05W18O49 sensor has higher response for n-butanol than the other five volatile gases. The response value of the sensor to n-butanol is almost unchanged over five repeatability tests and the long-term stability tests.