ZrAlO X ‐PVP Hybrid Dielectric Enables High‐Performance Phototransistors for Full‐Spectral Response and Full‐Color Quantum‐Dot Light‐Emitting Diodes

Abstract Organic‐inorganic hybrid dielectric materials, which combine the dielectric constant ( k ) of inorganic materials and the mechanical flexibility of organic materials, have recently exhibited notable application potential in flexible displays, wearable devices, and bionic synapses. Nevertheless, attaining high‐performance organic‐inorganic hybrid dielectric materials via a cost‐effective process at low temperatures remains a substantial challenge. Herein, for the first time, solution‐processed zirconium aluminum oxide‐polyvinyl pyrrolidone (ZrAlO X ‐PVP) hybrid dielectric films are developed at a low annealing temperature. Such films not only exhibit commendable dielectric characteristics with a low leakage current density of 1.19 × 10 −8 A cm −2 at 1 MV cm −1 and a high k of 25.32 at 1 kHz, but also display favorable flexibility. Without additional light‐absorbing layers, ZrAlO X ‐PVP dielectric films are designed for indium‐gallium‐zinc‐oxide phototransistors, which simultaneously realize high mobility (28.56 cm 2 V −1 s −1 ) and excellent detecting properties with broad spectral response (up to 660 nm) as well as a high detectivity of 2.94 × 10 13 Jones. Furthermore, full‐color active‐matrix quantum‐dot light‐emitting diode pixel circuits based on such phototransistors are demonstrated. The results imply that ZrAlO X ‐PVP hybrid dielectric films hold tremendous potential for application in the realm of flexible, low‐power, transparent, highly integrated, and cost‐effective electronics.