Asymmetric Double-Gate (ADG) Oxide Thin-Film Transistor Technology for Medium- and Small-Sized AMOLED Displays

An asymmetric double-gate (ADG) oxide thin-film transistor (TFT) technology is proposed to overcome the challenge of achieving a sufficiently wide data voltage range for accurate pixel programming in AMOLED displays. The proposed ADG TFT features two gates with significantly different gate capacitances. For a fabricated ADG TFT with the gate capacitances of 9.9 nF/cm ${}^{\mathbf {{2}}}$ and 23.7 nF/cm ${}^{\mathbf {{2}}}$ , two distinct subthreshold swing (SS) values of 382.6 and 213.6 mV/dec were achieved under two single-gate driving schemes. It is demonstrated that both the significantly expanded data voltage programming range and the fast switching speed can be achieved in AMOLED displays with the ADG oxide TFT technology. This approach provides a highly viable solution for achieving high-accuracy medium- and small-sized AMOLED displays using full oxide TFT technology.