欧姆接触
铟
肖特基势垒
镓
材料科学
氧化铟锡
光电子学
太阳能电池
锑化镓
肖特基二极管
纳米技术
冶金
薄膜
图层(电子)
二极管
超晶格
作者
Jan Lucaßen,Setareh Sedaghat,Martina Schmid
出处
期刊:Solar RRL
[Wiley]
日期:2022-12-25
卷期号:7 (4)
标识
DOI:10.1002/solr.202200867
摘要
Herein, an optoelectrical model is presented for copper indium gallium diselenide (CIGSe) solar cells in COMSOL Multiphysics, capable of multidimensional simulations, and it is applied to ultrathin (500 nm absorber thickness) solar cells. First, the modeling approach is shown. Special attention is paid to back contact materials, interface states, and defect application and their impact on the current–voltage ( J–V ) characteristics. To address whether the back contact is Schottky or Ohmic, the influence of the Schottky barrier height, recombination velocity, and interface states is shown. Then, the additional application of an acceptor defect gradient at the absorber back and a donor defect density distribution at the p – n junction is investigated. The results of these parameter adjustments are discussed, and the trends are shown to enable fast fitting of experimental J–V curves. Finally, the results are compared to the experimental J–V curves for indium tin oxide and Mo back contact, and challenges encountered are discussed while fitting. The optoelectrical model for CIGSe solar cells, established in two dimensions here, paves the way for comprehensively describing 2D and 3D solar cell structures, e.g., nanotextured or microsolar cells, as well as for considering different absorber thicknesses.
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