高电子迁移率晶体管
电场
击穿电压
材料科学
光电子学
电容
振荡(细胞信号)
电气工程
寄生电容
电压
晶体管
物理
化学
电极
工程类
生物化学
量子力学
作者
Peiran Wang,Chenkai Deng,Hongyu Cheng,Wei-Chih Cheng,Fangzhou Du,Chuying Tang,Chunqi Geng,Nick Tao,Qing Wang,Hongyu Yu
出处
期刊:Crystals
[MDPI AG]
日期:2023-01-07
卷期号:13 (1): 110-110
被引量:4
标识
DOI:10.3390/cryst13010110
摘要
In this paper, DC, transient, and RF performances among AlGaN/GaN HEMTs with a no field plate structure (basic), a conventional gate field plate structure (GFP), and a double floating field plate structure (2FFP) were studied by utilizing SILVACO ATLAS 2D device technology computer-aided design (TCAD). The peak electric fields under the gate in drain-side can be alleviated effectively in 2FFP devices, compared with basic and GFP devices, which promotes the breakdown voltage (BV) and suppresses the current collapse phenomenon. As a result, the ON-resistance increase caused by the current collapse phenomena is dramatically suppressed in 2FFP ~19.9% compared with GFP ~49.8% when a 1 ms duration pre-stress was applied with Vds = 300 V in the OFF-state. Because of the discontinuous FP structure, more electric field peaks appear at the edge of the FFP stacks, which leads to a higher BV of ~454.4 V compared to the GFP ~394.3 V and the basic devices ~57.6 V. Moreover, the 2FFP structure performs lower a parasitic capacitance of Cgs = 1.03 pF and Cgd = 0.13 pF than those of the GFP structure (i.e., Cgs = 1.89 pF and Cgd = 0.18 pF). Lower parasitic capacitances lead to a much higher cut-off frequency (ft) of 46 GHz and a maximum oscillation frequency (fmax) of 130 GHz than those of the GFP structure (i.e., ft = 27 GHz and fmax = 93 GHz). These results illustrate the superiority of the 2FFP structure for RF GaN HEMT and open up enormous opportunities for integrated RF GaN devices.
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